A team of Japanese researchers has obtained Silicon Carbide (SiC) crystals at approximately 1,472 °F, two-fold less than the temperatures at which commercial production begins.
Typically, in an industrial setup, the purest form of SiC is obtained at temperatures reaching 4,500 °F. However, at such high processing temperatures, formation and control of its porous structure at the nanometer scale becomes a challenge.
Scientists at the Institute for Materials Research (IMR) at Tohoku University circumvented the problem.
Low temp LMD forms SiC crystals
Using the age-old technique of liquid metal dealloying (LMD) under milder thermal conditions (1,472 °F), they generated SiCnanomaterialcrystals with a distinct porous architecture.
In LMD, a solid precursor is dipped into multiple molten metals for selectively remove a specific element.
”LMD is a method that has been previously applied mainly to metals, intermetallic compounds, and semimetals, but our research expands the scope to strongly covalently bonded ceramics,” said Hidemi Kato, professor at the Institute for Materials Research, Tohoku University.
Researchers took molten bismuth and immersed Mn5SiC, a layered solid precursor, into this liquid bath. They discovered that Manganese melted away and got mixed with the molten metal, while the SolidSiCprecursor rearranged to form crystalline β-SiC.
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The newly formed structure comprises nanoscale plates that were interconnected in thethree-dimensionalspace.
The findings were recently published inScripta Materialia, showing that first-principles energy calculations confirmed the stability of the framework obtained by this innovative technique.
Scientists proposed that the layered crystal structure of the precursor may have influenced the formation of the nanoplate architecture. However, they cautioned that further studies would be needed to ascertain the role of precursor structure in the growth and crystallographic orientation of the nanoplates.
Expressing hope from the modified LMD method, Kato in astatementsaid, “We think this approach could provide an exciting new strategy for designing nanoporous ceramics.”
The method adopted by Japanese researchers is likely to benefit the silicon carbide industry in the USA, which was valued at $1.80 billion in 2025, projected to reach $1.93 billion in 2026, according to a report published last year.
Much like a heavy-duty electric truck, it can handle much higher voltages, temperatures, and power with less energy loss and is one of the most critical semiconductor materials that powers modern electronics.
From powering AI data centers to improving electric-vehicle battery efficiency, Silicon carbide is a widely adopted material.
In an earlierstudy, scientists made significant progress in exploring ways of substantially enhancing the design of silicon carbide power devices that are slated for use in electric vehicles, trains, and many other vehicles.
With the expanding use of silicon carbide, including in robotics, defense, electric vehicles, solar power plants, renewable energy, and battery storage systems, experts have estimated its market to grow at an approximate 7.1% Compound Annual Growth Rate (CAGR) and reach up to $3.83 billion over the next decade.
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muskanbhatia- 1China unleashes 13-foot robot titan with 39 hydraulics to crush over 1,100 pounds
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- 3New electric car battery concept promises lighter packs with improved driving range
- 4New floating nuclear power project secures 4.95% enriched uranium fuel for testing
- 5China proposes new submarine tank that could operate underwater for up to two hours
A team of Japanese researchers has obtained Silicon Carbide (SiC) crystals at approximately 1,472 °F, two-fold less than the temperatures at which commercial production begins.
Typically, in an industrial setup, the purest form of SiC is obtained at temperatures reaching 4,500 °F. However, at such high processing temperatures, formation and control of its porous structure at the nanometer scale becomes a challenge.
Scientists at the Institute for Materials Research (IMR) at Tohoku University circumvented the problem.
Low temp LMD forms SiC crystals
Using the age-old technique of liquid metal dealloying (LMD) under milder thermal conditions (1,472 °F), they generated SiCnanomaterialcrystals with a distinct porous architecture.
In LMD, a solid precursor is dipped into multiple molten metals for selectively remove a specific element.
”LMD is a method that has been previously applied mainly to metals, intermetallic compounds, and semimetals, but our research expands the scope to strongly covalently bonded ceramics,” said Hidemi Kato, professor at the Institute for Materials Research, Tohoku University.
Researchers took molten bismuth and immersed Mn5SiC, a layered solid precursor, into this liquid bath. They discovered that Manganese melted away and got mixed with the molten metal, while the SolidSiCprecursor rearranged to form crystalline β-SiC.
More from Innovation
See AllInnovationUS unveils water-soluble 3D-printed tool for lighter hydrogen storage tanksInnovationNew class of tough metals avoids cold-weather fractures, offers better materials for clean energyInnovationGeorgia Tech’s Nexus AI supercomputer can now be accessed by all US scientistsInnovationThinner platinum coating could cut metal use in hydrogen equipment by 88%InnovationOxygen-based chipmaking method controls 2D crystal growth with over 99% success3-D nanoscale plates
The newly formed structure comprises nanoscale plates that were interconnected in thethree-dimensionalspace.
The findings were recently published inScripta Materialia, showing that first-principles energy calculations confirmed the stability of the framework obtained by this innovative technique.
Scientists proposed that the layered crystal structure of the precursor may have influenced the formation of the nanoplate architecture. However, they cautioned that further studies would be needed to ascertain the role of precursor structure in the growth and crystallographic orientation of the nanoplates.
Expressing hope from the modified LMD method, Kato in astatementsaid, “We think this approach could provide an exciting new strategy for designing nanoporous ceramics.”
The method adopted by Japanese researchers is likely to benefit the silicon carbide industry in the USA, which was valued at $1.80 billion in 2025, projected to reach $1.93 billion in 2026, according to a report published last year.
Much like a heavy-duty electric truck, it can handle much higher voltages, temperatures, and power with less energy loss and is one of the most critical semiconductor materials that powers modern electronics.
From powering AI data centers to improving electric-vehicle battery efficiency, Silicon carbide is a widely adopted material.
In an earlierstudy, scientists made significant progress in exploring ways of substantially enhancing the design of silicon carbide power devices that are slated for use in electric vehicles, trains, and many other vehicles.
With the expanding use of silicon carbide, including in robotics, defense, electric vehicles, solar power plants, renewable energy, and battery storage systems, experts have estimated its market to grow at an approximate 7.1% Compound Annual Growth Rate (CAGR) and reach up to $3.83 billion over the next decade.
Get the latest in engineering, tech, space & science - delivered daily to your inbox.
By subscribing, you agree to our
Terms of Useand
PoliciesYou may unsubscribe at any time.
0
COMMENT
Subscribe to
Today!
Access to exclusive content, expert insights and a deeper dive into engineering and tech. No ads, no limits.
Explore Now!By
muskanbhatia- 1China unleashes 13-foot robot titan with 39 hydraulics to crush over 1,100 pounds
- 2US to get 46,000-square-foot new submarine repair center that can boost battle readiness
- 3New electric car battery concept promises lighter packs with improved driving range
- 4New floating nuclear power project secures 4.95% enriched uranium fuel for testing
- 5China proposes new submarine tank that could operate underwater for up to two hours
